SI2318CDS product summary v ds (v) r ds(on) ( ? ) i d (a) a q g (typ.) 40 0.042 at v gs = 10 v 5.6 2.9 nc 0.051 at v gs = 4.5 v 5.1 marking code p9 xxx lot tracea b ility and date code part # code orderin g information: SI2318CDS-t1-ge3 (lead (p b )-free and halogen-free) n -channel mosfet g d s g s d top v ie w 2 3 sot-23 1 (3) (2) (1) notes: a. based on t c = 25 c b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady stat e conditions is 125 c/w. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 5.6 a a t c = 70 c 4.5 t a = 25 c 4.3 b, c t a = 70 c 3.5 b, c pulsed drain current i dm 20 continuous source-drain diode current t c = 25 c i s 1.75 t a = 25 c 1.04 b, c maximum power dissipation t c = 25 c p d 2.1 w t c = 70 c 1.3 t a = 25 c 1.25 b, c t a = 70 c 0. 8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t ? 5 s r thja 8 0 100 c/w maximum junction-to-foot (drain) steady state r thjf 40 60 features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc converters ? load switch ? portable and consumer applications product specification product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com vishay siliconix SI2318CDS document number: 67030 s10-2250-rev. a, 04-oct-10 www.vishay.com 1 new product n-channel 40 v (d-s) mosfet product summary v ds (v) r ds(on) ( : ) i d (a) a q g (typ.) 40 0.042 at v gs = 10 v 5.6 2.9 nc 0.051 at v gs = 4.5 v 5.1 marking code p9 xxx lot tracea b ility and date code part # code orderin g information: SI2318CDS-t1-ge3 (lead (p b )-free and halogen-free) n -channel mosfet g d s g s d top v ie w 2 3 sot-23 1 (3) (2) (1) notes: a. based on t c = 25 c b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady stat e conditions is 125 c/w. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 5.6 a a t c = 70 c 4.5 t a = 25 c 4.3 b, c t a = 70 c 3.5 b, c pulsed drain current i dm 20 continuous source-drain diode current t c = 25 c i s 1.75 t a = 25 c 1.04 b, c maximum power dissipation t c = 25 c p d 2.1 w t c = 70 c 1.3 t a = 25 c 1.25 b, c t a = 70 c 0. 8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t d 5 s r thja 8 0 100 c/w maximum junction-to-foot (drain) steady state r thjf 40 60 features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc converters ? load switch ? portable and consumer applications
notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 % b. guaranteed by design, not s ubject to production testing. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 v v ds temperature coefficient ? v ds /t j i d = 250 a 39 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 4.7 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a v ds = 40 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds ?? 5 v, v gs = 10 v 20 a drain-source on-state resistance a r ds(on) v gs ?? 10 v, i d = 4.3 a 0.035 0.042 ? v gs ?? 4.5 v, i d = 3.9 a 0.041 0.051 forward transconductance a g fs v ds = 20 v, i d = 4.3 a 17 s dynamic b input capacitance c iss v ds = 20 v, v gs = 0 v, f = 1 mhz 340 pf output capacitance c oss 60 reverse transfer capacitance c rss 30 total gate charge q g v ds = 20 v, v gs = 10 v, i d = 4.3 a 5. 8 9 nc v ds = 20 v, v gs = 4.5 v, i d = 4.3 a 2.9 6 gate-source charge q gs 1.1 gate-drain charge q gd 0.9 gate resistance r g f = 1 mhz 0.6 3.3 6.6 ? tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 5.7 ? i d ? 3.5 a, v gen = 4.5 v, r g = 1 ? 12 20 ns rise time t r 50 75 turn-off delay time t d(off) 10 20 fall time t f 8 16 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 5.7 ? i d ? 3.5 a, v gen = 10 v, r g = 1 ? 714 rise time t r 20 30 turn-off delay time t d(off) 14 21 fall time t f 8 16 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 1.75 a pulse diode forward current i sm 20 body diode voltage v sd i s = 3.5 a, v gs ?? 0 v 0. 8 51.2 v body diode reverse recovery time t rr i f = 3.5 a, di/dt = 100 a/s, t j = 25 c 15 23 ns body diode reverse recovery charge q rr 714nc reverse recovery fall time t a 11 ns reverse recovery rise time t b 4 SI2318CDS product specification product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com www.vishay.com 2 document number: 67030 s10-2250-rev. a, 04-oct-10 vishay siliconix SI2318CDS new product notes: a. pulse test; pulse width d 300 s, duty cycle d 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 v v ds temperature coefficient ' v ds /t j i d = 250 a 39 mv/c v gs(th) temperature coefficient ' v gs(th) /t j - 4.7 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a v ds = 40 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds d 5 v, v gs = 10 v 20 a drain-source on-state resistance a r ds(on) v gs 10 v, i d = 4.3 a 0.035 0.042 : v gs 4.5 v, i d = 3.9 a 0.041 0.051 forward transconductance a g fs v ds = 20 v, i d = 4.3 a 17 s dynamic b input capacitance c iss v ds = 20 v, v gs = 0 v, f = 1 mhz 340 pf output capacitance c oss 60 reverse transfer capacitance c rss 30 total gate charge q g v ds = 20 v, v gs = 10 v, i d = 4.3 a 5. 8 9 nc v ds = 20 v, v gs = 4.5 v, i d = 4.3 a 2.9 6 gate-source charge q gs 1.1 gate-drain charge q gd 0.9 gate resistance r g f = 1 mhz 0.6 3.3 6.6 : tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 5.7 : i d # 3.5 a, v gen = 4.5 v, r g = 1 : 12 20 ns rise time t r 50 75 turn-off delay time t d(off) 10 20 fall time t f 8 16 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 5.7 : i d # 3.5 a, v gen = 10 v, r g = 1 : 714 rise time t r 20 30 turn-off delay time t d(off) 14 21 fall time t f 8 16 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 1.75 a pulse diode forward current i sm 20 body diode voltage v sd i s = 3.5 a, v gs 0 v 0. 8 51.2 v body diode reverse recovery time t rr i f = 3.5 a, di/dt = 100 a/s, t j = 25 c 15 23 ns body diode reverse recovery charge q rr 714nc reverse recovery fall time t a 11 ns reverse recovery rise time t b 4
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